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IRFIZ24N

International Rectifier
Part Number IRFIZ24N
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5K...
Datasheet PDF File IRFIZ24N PDF File

IRFIZ24N
IRFIZ24N

Overview
PD - 9.
1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.
5KVRMS … l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated Description l l D VDSS = 55V G S RDS(on) = 0.
07Ω ID = 14A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The Fullpak is moun...


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