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IRFP253

Part Number	IRFP253
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Aug 8, 2016
Detailed Description	isc N-Channel MOSFET Transistor IRFP253 FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(M...
Datasheet	IRFP253 PDF File

Overview

isc N-Channel MOSFET Transistor IRFP253 FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
12Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 150 V ...

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