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NTE2304

NTE
Part Number NTE2304
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2304 Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314) Description: The NTE2304 is a silicon ...
Datasheet PDF File NTE2304 PDF File

NTE2304
NTE2304

Overview
NTE2304 Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314) Description: The NTE2304 is a silicon NPN transistor in a TO3P type package.
Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.
Features: D Low Collector–Emitter Saturation Voltage D Wide ASO and Resistant to Breakdowns Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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60V Collector–Emitter Voltage, VCEO .
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50V Emitter–Base voltage, VEBO .
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6V Collector Current, IC Continuous .
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15A Peak .
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20A Allowable Collector Dissipation (TC = +25°C ), PC .
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90W Operating Junction Temperature, TJ .
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+150°C Storage Ambient Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE fT VCE(sat) Test Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 8A Current Gain–Bandwidth Product Collector–Emitter Saturation Voltage Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–B...


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