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NTE2305

Part Number	NTE2305
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	May 9, 2005
Detailed Description	NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (N...
Datasheet	NTE2305 PDF File

Overview

NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
Features: D High Collector–Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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160V Collector–Base Voltage, VCB .
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160V Emitter–Base Voltage, VEB .
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70V Collector Current, IC Continuous .
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16A Peak (Note 1) .
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20A Continuous Base Current, IB .
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5A Power Dissipation (TC = +25°C), PD .
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125W Operating Junction Temperature Range, TJ .
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–65° to +150°C Storage Temperature Range, Tstg .
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–65° to +150°C Thermal Resistance, Junction–to–Case, RthJC .
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1°C/W Note 1.
Pulse Test: Pulse Width ≤ 5ms, Duty Cycle ≥ 10%.
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