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NTE2301

NTE
Part Number NTE2301
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor...
Datasheet PDF File NTE2301 PDF File

NTE2301
NTE2301

Overview
NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits.
Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction D Safe Operating Area @ 50µs = 20A, 400V D Switching Times with Inductive Loads: tf = 0.
4µs (Typ) @ IC = 4.
5A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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750V Collector–Emitter Voltage, VCEX .
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1500V Emitter–Base Voltage, VEB .
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5V Continuous Collector Current, IC .
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5A Continuous Base Current, IB .
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4A Continuous Emitter Current, IE .
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9A Total Power Dissipation, PD TC = +25°C .
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100W TC = +100°C .
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40W Derate Above 25°C .
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0.
8W/°C Operating Junction Temperature Range, TJ .
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–65° to +150°C Storage Temperature Range, Tstg .
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–65° to +150°C Thermal Resistance, Jun...


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