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CEM4431

Chino-Excel Technology
Part Number CEM4431
Manufacturer Chino-Excel Technology
Description P-Channel Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEM4431 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.8A, RDS(ON) = 40mΩ @VGS = -10V. RDS(ON) = ...
Datasheet PDF File CEM4431 PDF File

CEM4431
CEM4431

Overview
CEM4431 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.
8A, RDS(ON) = 40mΩ @VGS = -10V.
RDS(ON) = 70mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -30 VGS ±20 ID -5.
8 IDM -30 Maximum Power Dissipation PD 2.
5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W 1999.
May 5 - 40 http://www.
cetsemi.
com CEM4431 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current G...


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