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CEM4432

Chino-Excel Technology
Part Number CEM4432
Manufacturer Chino-Excel Technology
Description Dual P-Channel MOSFET
Published Sep 17, 2014
Detailed Description CEM4432 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.5A, RDS(ON) = 40mΩ @VGS = -10V. RDS(ON...
Datasheet PDF File CEM4432 PDF File

CEM4432
CEM4432

Overview
CEM4432 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.
5A, RDS(ON) = 40mΩ @VGS = -10V.
RDS(ON) = 70mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30 Units V V A A W C ±20 -5.
5 -22 2.
0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units C/W 2003.
April 5 - 44 http://www.
cetsemi.
com CEM4432 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -2.
3A VDS = -15V, ID = -5.
3A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 21 23 33 60 30 4 7.
5 -2.
3 -1.
2 40 45 65 100 36 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -5.
3A VGS = -4.
5V, ID = -2A VDS = -15V, ID = -5.
3A -1 35 55 9 1124 488 150 Min -30 -1 100 -100 -3 40 70 Typ M...


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