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CEM8938

Chino-Excel Technology
Part Number CEM8938
Manufacturer Chino-Excel Technology
Description Dual MOSFET
Published Sep 17, 2014
Detailed Description CEM8938 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RD...
Datasheet PDF File CEM8938 PDF File

CEM8938
CEM8938

Overview
CEM8938 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V.
RDS(ON) = 38mΩ @VGS = 4.
5V.
-30V, -6A, RDS(ON) = 38mΩ @VGS = -10V.
RDS(ON) = 57mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8 1 D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units V V A A W C ±20 7 20 2.
0 -55 to 150 ±20 -6 -20 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units C/W 2005.
March 5 - 186 http://www.
cetsemi.
com CEM8938 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.
3A VDS = 15V, ID = 7A, VGS = 10V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 15 14 94 39 21 2.
6 4.
4 1.
3 1.
2 30 28 150 60 27 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 7A VGS = 4.
5V, ID = 6A VDS = 5V, ID = 7A 1 21 30 15 750 375 110 Min 30 1 100 -100...


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