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CEM8968

CET
Part Number CEM8968
Manufacturer CET
Description Dual Enhancement Mode Field Effect Transistor
Published Oct 8, 2015
Detailed Description CEM8968 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. R...
Datasheet PDF File CEM8968 PDF File

CEM8968
CEM8968

Overview
CEM8968 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 40mΩ @VGS = 4.
5V.
-30V, -6.
2A, RDS(ON) = 33mΩ @VGS = -10V.
RDS(ON) = 52mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 5 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 7 IDM 28 P-Channel -30 ±20 -6.
2 -25 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units C/W Details are subject to change without notice .
1 Rev 2.
2007.
Jan http://www.
cet-mos.
com CEM8968 N-Channel Electrica...


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