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4920

Tuofeng Semiconductor
Part Number 4920
Manufacturer Tuofeng Semiconductor
Description N-Channel MOSFET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology co., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET 4920 ▼ Simple Drive Requi...
Datasheet PDF File 4920 PDF File

4920
4920

Overview
Shenzhen Tuofeng Semiconductor Technology co.
, LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET 4920 ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 The TUOFENG MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
BVDSS RDS(ON) ID 30V 25mΩ 7A D1 G1 G2 S1 D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 IDM PD@TA=25℃ TSTG TJ Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 30 ± 20 7 20 2 0.
016 -55 to 150 -55 to 150 Units V V A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient3 Max.
Value 62.
5 Unit ℃/W Shenzhen Tuofeng Semiconductor Technology co.
, LTD 4920 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=7A VGS=4.
5V, ID=5.
2A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=20V, VGS=0V 30 - - V - 0.
037 - V/℃ - - 25 mΩ - - 35 mΩ 1.
3 - 2 V - 14 - S - - 25 uA IGSS Gate-Source Leakage Qg Total Gate Charge2 VGS=±20V ID=7A Qgs Gate-Source Charge VDS=15V Qgd Gate-Drain ("Miller") Charge VGS=4.
5V td(on) Turn-on Delay Time2 VDS=15V tr Rise Time ID=1A td(off) Turn-off Delay Time RG=6Ω,VGS=10V tf Fall Time RD=15Ω Ciss Input Capacitance VGS=0V Coss Output Capacita...


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