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BUW70

Part Number	BUW70
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 2, 2016
Detailed Description	isc Silicon NPN Power Transistor BUW70 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Low C...
Datasheet	BUW70 PDF File

Overview

isc Silicon NPN Power Transistor BUW70 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= 0.
8V(Max.
) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in clocked voltage converters.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 150 V 100 V 7 V 10 A 3 ...

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