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BUW76

Inchange Semiconductor
Part Number BUW76
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Sep 2, 2016
Detailed Description isc Silicon NPN Power Transistor BUW76 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ·Hig...
Datasheet PDF File BUW76 PDF File

BUW76
BUW76

Overview
isc Silicon NPN Power Transistor BUW76 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.
) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended in fast switching applications for high output powers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 17 A IB Base Current-Continuous 5 A IBM Base Current-Peak PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 7 A 120 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
25 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A IEBO ICBO hFE-1 Emitter cut-off current Collector-Base Cutoff Current DC Current Gain VEB=7V; IC=0 VCB= 750V; IE= 0 VCB= 750V; IE= 0; Tc= 125℃ IC= 5A; VCE= 1.
5V hFE-2 DC Current Gain IC= 7A; VCE= 1.
5V BUW76 MIN TYP.
MAX UNIT 350 V 1.
5 V 1.
5 V 1.
0 mA 1.
0 10 mA 8 5 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace in...


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