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MTB050N15J3

Cystech Electonics
Part Number MTB050N15J3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C979J3 Issued Date : 2014.08.14 Revised Date : 2015.03.02 Page No. : 1/9 N -Chan...
Datasheet PDF File MTB050N15J3 PDF File

MTB050N15J3
MTB050N15J3


Overview
CYStech Electronics Corp.
Spec.
No.
: C979J3 Issued Date : 2014.
08.
14 Revised Date : 2015.
03.
02 Page No.
: 1/9 N -Channel Enhancement Mode Power MOSFET MTB050N15J3 BVDSS ID @VGS=10V 150V 20A RDS(ON)@VGS=10V, ID=15A 47.
5mΩ(typ) RDS(ON)@VGS=4.
5V, ID=10A 47.
5mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit MTB050N15J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB050N15J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB050N15J3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=12mH, ID=9.
8A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID *2 *2 IDSM *3 *3 IDM IAS EAS PD *2 *2 PDSM *3 *3 Tj, Tstg Spec.
No.
: C979J3 Issued Date : 2014.
08.
14 Revised Date : 2015.
03.
02 Page No.
: 2/9 Limits 150 ±20 20 14 4.
8 3.
0 3.
9 2.
5 54 9.
8 576 50 25 2.
5 1.
0 1.
7 0.
7 -55~+175 Unit V A mJ W °C Thermal Data Parameter Symbol Thermal Resistance, Junction-to-case, max Rth,j-c Thermal Resistance, Junction-to-ambient, max Thermal Re...



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