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MTB080P06J3

Cystech Electonics
Part Number MTB080P06J3
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C069J3 Issued Date : 2016.03.16 Revised Date : Page No. : 1/ 9 P-Channel Enhance...
Datasheet PDF File MTB080P06J3 PDF File

MTB080P06J3
MTB080P06J3

Overview
CYStech Electronics Corp.
Spec.
No.
: C069J3 Issued Date : 2016.
03.
16 Revised Date : Page No.
: 1/ 9 P-Channel Enhancement Mode Power MOSFET MTB080P06J3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-8A -60V -12.
5A 82.
5mΩ(typ) 107mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free Lead Plating & Halogen-free Package Equivalent Circuit MTB080P06J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB080P06J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB080P06J3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C069J3 Issued Date : 2016.
03.
16 Revised Date : Page No.
: 2/ 9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=-10V Continuous Drain Current @TC=100°C, VGS=-10V Continuous Drain Current @TA=25°C, VGS=-10V Continuous Drain Current @TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=-11A, VDD=-50V TC=25°C Total Power Dissipation TC=100°C TA=25°C TA=70°C Operating Junction and Storage Temperature Range (Note 2) (Note 2) (Note 3) (Note 3) (Note 2) (Note 1) (Note 1) (Note 2) (Note 2) VDS VGS ID IDSM IDM IAS EAS PD PDSM Tj, Tstg * 100% UIS testing in condition of VD=-15V, L=1mH, VG=-10V, IAS=-9A, Rated VDS=-60V Limits -60 ±20 -12.
5 -7.
9 -3.
5 -2.
8 -45 -12.
5 60 31 12 2.
5 1.
6 -55~+150 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient, t≤10s (Note 2) Thermal Resistance, Junction-to-ambient, steady state Symbol RθJC RθJA Typical 3.
6 15 40 Maximum 4 18 50 Unit °C/W ...


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