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MTB080P06L3

Cystech Electonics
Part Number MTB080P06L3
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C069L3 Issued Date : 2016.03.14 Revised Date : Page No. : 1/9 P-Channel Enhancem...
Datasheet PDF File MTB080P06L3 PDF File

MTB080P06L3
MTB080P06L3


Overview
CYStech Electronics Corp.
Spec.
No.
: C069L3 Issued Date : 2016.
03.
14 Revised Date : Page No.
: 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06L3 BVDSS ID @ TA=25°C, VGS=-10V RDSON@VGS=-10V, ID=-4A RDSON@VGS=-4.
5V, ID=-2A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package -60V -3.
3A 90mΩ (typ) 117mΩ (typ) Equivalent Circuit MTB080P06L3 G:Gate D:Drain S:Source Outline SOT-223 D S D G Ordering Information Device MTB080P06L3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB080P06L3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V, TA=25°C Continuous Drain Current @ VGS=-10V, TA=70°C Pulsed Drain Current *1 Single Pulse Avalanche Current Avalanche Energy @ L=6mH, ID=-4A, VDD=-15V Repetitive Avalanche Energy @ L=0.
05mH *2 Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=70℃ Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature *2.
Duty cycle ≤ 1% Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Spec.
No.
: C069L3 Issued Date : 2016.
03.
14 Revised Date : Page No.
: 2/9 Limits -60 ±20 -3.
3 -2.
6 -14 -4 48 0.
5 2.
5 1.
6 -55~+150 Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max RƟJC RƟJA 20 50 (Note) °C/W Note : Surface mounted on a 1 in2 pad of 2 oz.
copper, t≤10s; 120°C/W when mounted on minimum copper pad.
Characteristics (Tc=25°C, unless otherwise specified) Symbol Min.
Typ.
Max.
Unit Test Conditions Static BVDSS ...



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