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MTB080P06N6

Cystech Electonics
Part Number MTB080P06N6
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9 P-Chann...
Datasheet PDF File MTB080P06N6 PDF File

MTB080P06N6
MTB080P06N6

Overview
CYStech Electronics Corp.
Spec.
No.
: C069N6 Issued Date : 2016.
03.
24 Revised Date : 2016.
04.
15 Page No.
: 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06N6 BVDSS ID@VGS=-4.
5V, TC=25°C ID@VGS=-4.
5V, TA=25°C RDSON(TYP) VGS=-10V, ID=-3A VGS=-4.
5V, ID=-2.
7A -60V -3.
8A -3.
0A 79mΩ 107mΩ Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Limits -60 ±20 -3.
8 -3.
0 -3.
0 -2.
4 -40 3.
1 2.
0 2.
0 1.
25 -55~+150 Unit V A W °C Thermal Data Parameter Symbol Value Thermal Resistance, Junction-to-case, max Rth,j-c 40 Thermal Resistance, Junction-to-ambient, max (Note 1) RθJA 62.
5 Note : 1.
Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec.
156℃/W when mounted on minimum copper pad.
2.
Pulse width limited by maximum junction temperature.
3.
Pulse Width ≤300μs, Duty Cycle≤2% Unit °C/W MTB080P06N6 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C069N6 Issued Date : 2016.
03.
24 Revised Date : 2016.
04.
15 Page No.
: 2/9 Electrical Characteristics (Ta=25°C, unless otherwise noted) Symbol Min.
Typ.
Max.
Unit Test Conditions Static BVDSS -60 - - V VGS=0V, ID=-250μA ΔBVDSS/ΔTj - -56 - mV/℃ Reference to 25℃, ID=-250μA VGS(th) -1 - -2.
5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V, VDS=0V IDSS - - -1 -10 μA VDS=-60V, VGS=0V, Tj=25℃ VDS=-48V, VGS=0V, Tj=55℃ *RDS(ON) - 79 107 104 150 mΩ ID=-3A, VGS=-10V ID=-2.
7A, VGS=-4.
5V *GFS - 6.
1 - S VDS=-10V, ID=-3A Dy...


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