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SSF3339

Silikron Semiconductor
Part Number SSF3339
Manufacturer Silikron Semiconductor
Description MOSFET
Published Sep 22, 2016
Detailed Description Main Product Characteristics: VDSS RDS(on) ID -30V 37mΩ (typ.) -4.1A ① SOT-23 Features and Benefits:  Advanced MOSF...
Datasheet PDF File SSF3339 PDF File

SSF3339
SSF3339

Overview
Main Product Characteristics: VDSS RDS(on) ID -30V 37mΩ (typ.
) -4.
1A ① SOT-23 Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3339 D G Marking and pin Assignment S Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating: @TA=25℃ unless otherwise specified Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max.
-4.
1 ① -3.
5 ① -20 1.
4 -30 ± 20 -55 to +150 Units A W V V °C Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ ©Silikron Semiconductor CO.
,LTD.
2013.
03.
01 www.
silikron.
com Typ.
— Max.
90 Units °C /W Version : 1.
1 page 1 of 8 SSF3339 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge td(on) Turn-on delay time tr Rise time td(off) Turn-Off delay time tf Fall time Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Min.
-30 — — -1 — — — — — — — — — — — — — — — Typ.
— 37 54 — -1.
4 — — — — 17 2.
5 5.
0 7.
2 4.
8 24 11 665 108 83 Max.
—...


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