DatasheetsPDF.com

SSF3324

Silikron Semiconductor Co
Part Number SSF3324
Manufacturer Silikron Semiconductor Co
Description MOSFET
Published Mar 6, 2010
Detailed Description SSF3324 www.DataSheet4U.com DESCRIPTION The SSF3324 uses advanced trench technology to provide excellent RDS(ON) and lo...
Datasheet PDF File SSF3324 PDF File

SSF3324
SSF3324

Overview
SSF3324 www.
DataSheet4U.
com DESCRIPTION The SSF3324 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
This device is suitable for use as a load switch or in PWM applications.
G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =5.
8A RDS(ON) < 35mΩ @ VGS=4.
5V RDS(ON) < 30mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 3324 Device SSF3324 Device Package SOT-23 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 30 ±12 5.
8 30 1.
4 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=24V,VGS=0V Min 30 Typ Max Unit V 1 μA ©Silikron Semiconductor CO.
,LTD.
1 http://www.
silikron.
com v1.
0 SSF3324 www.
DataSheet4U.
com Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IGSS VGS=±12V,VDS=0V ±100 nA VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=4.
5V, ID=5A VGS=10V, ID=5.
8A...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)