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SSF3338

GOOD-ARK
Part Number SSF3338
Manufacturer GOOD-ARK
Description N-Channel MOSFET
Published Sep 22, 2016
Detailed Description SSF3338 30V N-Channel MOSFET DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and l...
Datasheet PDF File SSF3338 PDF File

SSF3338
SSF3338



Overview
SSF3338 30V N-Channel MOSFET DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS = 30V,ID =4A RDS(ON) < 65mΩ @ VGS=4.
5V RDS(ON) < 47mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOT-23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 3338 SSF3338 SOT-23 Ø330mm Tape Width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 4 3.
5 20 1.
25 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 130 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max Unit 30 V www.
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0 SSF3338 30V N-Channel MOSFET Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IG SS VGS(th) RDS(O N) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=30V,VGS=0V VGS=±20V,VDS=0V VDS=VGS,ID=...



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