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SSF6007

Silikron Semiconductor
Part Number SSF6007
Manufacturer Silikron Semiconductor
Description MOSFET
Published Sep 22, 2016
Detailed Description Main Product Characteristics: SSF6007 VDSS -50V RDS(on) 2.1ohm(typ.) 6007 ID -130mA Features and Benefits: SOT-2...
Datasheet PDF File SSF6007 PDF File

SSF6007
SSF6007

Overview
Main Product Characteristics: SSF6007 VDSS -50V RDS(on) 2.
1ohm(typ.
) 6007 ID -130mA Features and Benefits: SOT-23 Marking and pin Assignment Schematic diagram  Advanced MOSFET process technology  Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance.
These features combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS ESD TJ TSTG Parameter Continuous Drain Current, VGS @ -10V① Continuous Drain Current, VGS @ -10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage ESD Rating (HBM module) Operating Junction and Storage Temperature Range Thermal Resistance Max.
-130 -100 -520 230 -50 ± 20 1 -55 to + 150 Symbol Characterizes Typ.
Max.
Junction-to-ambient (t ≤ 10s) ④ RθJA — 556 Junction-to-Ambient (PCB mounted, steady-state) ④ — 540 Units mA mW V V KV °C Units ℃/W ℃/W ©Silikron Semiconductor CO.
,LTD.
2014.
02.
10 www.
silikron.
com Version : 1.
1 page 1 of 6 SSF6007 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS gfs Ciss Coss Crss td(on) tr td(off) tf Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Min.
-50 — -0.
8 — — — — 50 — — — — — — — Typ.
— 2.
1 — — — — — — 45 18 1...


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