DatasheetsPDF.com

SSF6005

Silikron Semiconductor
Part Number SSF6005
Manufacturer Silikron Semiconductor
Description MOSFET
Published Sep 22, 2016
Detailed Description                                  Main Product Characteristics: VDSS 60V RDS(on) ID 2.7mΩ(typ.) 160A Features and Be...
Datasheet PDF File SSF6005 PDF File

SSF6005
SSF6005

Overview
                                 Main Product Characteristics: VDSS 60V RDS(on) ID 2.
7mΩ(typ.
) 160A Features and Benefits: TO-220  „ Advanced MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSF6005  Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.
07mH② Avalanche Current @ L=0.
07mH② Operating Junction and Storage Temperature Range Max.
160 110 640 230 1.
5 60 ± 20 350 100 -55 to + 175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.
,LTD.
2013.
08.
13 www.
silikron.
com  Version : 1.
1 page 1 of 8                                  SSF6005 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ.
— — — Max.
0.
65 62 40 Units ℃/W ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)