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SSF6007

GOOD-ARK
Part Number SSF6007
Manufacturer GOOD-ARK
Description P-Channel MOSFET
Published Sep 22, 2016
Detailed Description Main Product Characteristics VDSS -50V RDS(on) 2.1ohm(typ.) ID -130mA Features and Benefits SOT-23  Advanced tre...
Datasheet PDF File SSF6007 PDF File

SSF6007
SSF6007

Overview
Main Product Characteristics VDSS -50V RDS(on) 2.
1ohm(typ.
) ID -130mA Features and Benefits SOT-23  Advanced trench MOSFET process technology  Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF6007 50V P-Channel MOSFET 6007 Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance.
These features combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS ESD TJ TSTG Parameter Continuous Drain Current, VGS @ -10V① Continuous Drain Current, VGS @ -10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage ESD Rating (HBM module) Operating Junction and Storage Temperature Range Thermal Resistance Max.
-130 -100 -520 230 -50 ± 20 1 -55 to + 150 Symbol RθJA Characteristics Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ www.
goodark.
com Page 1 of 5 Typ.
— — Max.
556 540 Units mA mW V V KV °C Units ℃/W ℃/W Rev.
1.
0 SSF6007 50V P-Channel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS gfs Ciss Coss Crss td(on) tr td(off) tf Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Min.
-50 — -0.
8 — — — -10 50 — — — — — — — Typ.
— 2.
...


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