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SSF6008

GOOD-ARK
Part Number SSF6008
Manufacturer GOOD-ARK
Description N-Channel MOSFET
Published Sep 22, 2016
Detailed Description SSF6008 60V N-Channel MOSFET FEATURES  Advanced trench process technology  avalanche energy, 100% test  Fully charac...
Datasheet PDF File SSF6008 PDF File

SSF6008
SSF6008

Overview
SSF6008 60V N-Channel MOSFET FEATURES  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =84A BV=60V R DS (ON)=8mΩ DESCRIPTION The SSF6008 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET.
This new technology increases the device reliability and electrical parameter repeatability.
SSF6008 is assembled in high reliability and qualified assembly house.
APPLICATIONS  Power switching application Absolute Maximum Ratings Parameter ID@Tc=25ْ C Continuous drain current,VGS@10V ID@Tc=100Cْ IDM Continuous drain current,VGS@10V Pulsed drain current ① PD@TC=25ْC Power dissipation Linear derating factor VGS Gate-to-Source voltage EAS Single pulse avalanche energy ② EAR Repetitive avalanche energy ① dv/dt Peak diode recovery voltage TJ TSTG Operating Junction and Storage Temperature Range SSF6008 Top View (T0-220) Max.
84 76 310 181 1.
5 ±20 400 20 30 –55 to +175 Units A W W/ْ C V mJ mJ v/ns ْC Thermal Resistance Parameter RθJC Junction-to-case RθJA Junction-to-ambient Min.
Typ.
Max.
— 0.
83 — — — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min.
Typ.
Max.
Units BVDSS Drain-to-Source breakdown voltage 60 — —V RDS(on) Static Drain-to-Source on-resistance — 5.
5 8 mΩ VGS(th) Gate threshold voltage 2.
0 — 4.
0 V —— 2 IDSS Drain-to-Source leakage current —— μA 10 IGSS Gate-to-Source forward leakage — — 100 nA www.
goodark.
com Page 1 of 6 Test Conditions VGS=0V,ID=250μA VGS=10V,ID=30A VDS=VGS,ID=250μA VDS=60V,VGS=0V VDS=60V, VGS=0V,TJ=150ْC VGS=20V Rev.
2.
2 Gate-to-Source reverse leakage Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge td(on) Turn-on delay time tr Rise time td(off) Turn-Off delay time tf Fall time Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance — — -100 — 90 — 18 — nC — 28 — ...


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