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DF2S6.8S

Toshiba Semiconductor
Part Number DF2S6.8S
Manufacturer Toshiba Semiconductor
Description ESD Protection Diodes
Published Sep 29, 2016
Detailed Description TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8S DF2S6.8S Product for Use Only as Protection a...
Datasheet PDF File DF2S6.8S PDF File

DF2S6.8S
DF2S6.8S


Overview
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.
8S DF2S6.
8S Product for Use Only as Protection against Electrostatic Discharge (ESD).
Unit: mm CATHODE MARK * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application.
z 2terminal ultra small package suitable for mounting on small space.
Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Power dissipation Junction temperature Storage temperature range P 150* mW Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.
g.
the application of high ...



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