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DF2S6.8S

Toshiba Semiconductor
Part Number DF2S6.8S
Manufacturer Toshiba Semiconductor
Description Diodes for Protecting against ESD
Published May 17, 2011
Detailed Description DF2S6.8S TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8S Product for Use Only as Protection ag...
Datasheet PDF File DF2S6.8S PDF File

DF2S6.8S
DF2S6.8S


Overview
DF2S6.
8S TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.
8S Product for Use Only as Protection against Electrostatic Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application.
z 2terminal ultra small package suitable for mounting on small space.
CATHODE MARK Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150* 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/curre...



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