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MJD127

Part Number	MJD127
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Darlington Power Transistor
Published	Nov 8, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 DESCRIPTION ·Low Collector-Emitter saturati...
Datasheet	MJD127 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 PC PC Rth j-a Total Power Dissipation @ Ta=25℃ Collector Power Dissipation TC=25℃ Thermal Resi...

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