DatasheetsPDF.com

BUL1203

STMicroelectronics
Part Number BUL1203
Manufacturer STMicroelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description ® BUL1203E HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PA...
Datasheet PDF File BUL1203 PDF File

BUL1203
BUL1203

Overview
® BUL1203E HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED s APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING (277 V HALF BRIDGE AND 120 V PUSH-PULL TOPOLOGIES) TO-220 3 1 2 DESCRIPTION The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h FE range while maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-BaseVoltage (I E = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max.
Operating Junction Temperature Value 1200 1200 550 9 5 8 2 4 100 -65 to 150 150 Unit V V V V A A A A W o o C C 1/7 December 2003 BUL1203E THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.
25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 1200 V V CE = 550 V I C = 100 mA L = 25 mH 550 Min.
Typ.
Max.
100 100 Unit µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) ∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I E = 10 mA IC = 1 A IC = 2 A IC = 3 A IC = 2 A IC = 3 A IC IC IC IC = = = = 1 mA 10 mA 0.
8 A 2A I B = 0.
2 A I B = 0.
4 A IB = 1 A I B = 0.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)