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2SC6017

Part Number	2SC6017
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 18, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6017 DESCRIPTION ·Large current capacitance ·High-speed swi...
Datasheet	2SC6017 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6017 DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2169 APPLICATIONS ·Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 13 A 20 W 0.
95 150 ℃ Tst...

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