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AUIRF7304Q

International Rectifier
Part Number AUIRF7304Q
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 9, 2013
Detailed Description AUTOMOTIVE GRADE PD - 97653A AUIRF7304Q Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual ...
Datasheet PDF File AUIRF7304Q PDF File

AUIRF7304Q
AUIRF7304Q

Overview
AUTOMOTIVE GRADE PD - 97653A AUIRF7304Q Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Dynamic dV/dT Rating Logic Level 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 V(BR)DSS RDS(on) max.
ID -20V 0.
090Ω -4.
3A 6 5 Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 AUIRF7304Q Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG 10 Sec.
Pulsed Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current Power Dissipation Max.
-4.
7 -4.
3 -3.
4 -17 2.
0 0.
016 ± 12 -5.
0 -55 to + 150 Units A e c W W/°C V V/ns °C Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and g Storage Temperature Range Thermal Resistance RθJA Junction-to-Ambient fg Parameter Typ.
––– Max.
62.
5 Units °C/W HEXFET® is a regist...


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