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AUIRF7309Q

International Rectifier
Part Number AUIRF7309Q
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 9, 2013
Detailed Description PD - 97655A AUTOMOTIVE GRADE Features l l l l l l l l AUIRF7309Q HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 ...
Datasheet PDF File AUIRF7309Q PDF File

AUIRF7309Q
AUIRF7309Q

Overview
PD - 97655A AUTOMOTIVE GRADE Features l l l l l l l l AUIRF7309Q HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* D1 D1 D2 D2 N-CH P-CH V(BR)DSS ID 30V 4.
7A -30V -3.
5A RDS(on) max.
0.
05Ω 0.
10Ω P-CHANNEL MOSFET Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 AUIRF7309Q Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter N-Channel ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG 10 Sec.
Pulsed Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range 4.
7 4 3.
2 16 Max.
P-Channel -3.
5 -3.
0 -2.
4 -12 1.
4 0.
011 ± 20 6.
9 -55 to + 150 -6.
0 Units A f c f d W W/°C V V/ns °C Peak Diode Recovery dv/dt Thermal Resistance Parameter ...


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