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AUIRF7303Q

International Rectifier
Part Number AUIRF7303Q
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 9, 2013
Detailed Description AUTOMOTIVE GRADE PD - 97654C AUIRF7303Q Features l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 Advanced P...
Datasheet PDF File AUIRF7303Q PDF File

AUIRF7303Q
AUIRF7303Q

Overview
AUTOMOTIVE GRADE PD - 97654C AUIRF7303Q Features l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* D1 D1 D2 D2 V(BR)DSS RDS(on) max.
ID 30V 0.
05Ω 5.
3A 3 4 6 5 Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 AUIRF7303Q Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS EAS(Tested) dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Max.
5.
3 4.
4 44 2.
4 0.
02 ± 20 414 1160 1.
6 -55 to + 175 Units A W W/°C V mJ V/ns °C c e d g Thermal Resistance Parameter RθJA Junction-to-Ambient h Max.
62.
5 Units °C/W HEXFET® is a registered tradema...


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