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DG830

Part Number	DG830
Manufacturer	DGME
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Published	Apr 12, 2017
Detailed Description	DG830 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG830N，，，，，。，，。 DG830 is an N-channel enhance...
Datasheet	DG830 PDF File

Overview

DG830 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG830N，，，，，。，，。 DG830 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 500 4.
5 1.
5 14 V A Ω pF Symbol Package 1 /8 ABSOLUTE MAXIMUM R...

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