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2N7370

Part Number	2N7370
Manufacturer	Microsemi
Description	NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
Published	Jun 19, 2017
Detailed Description	TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/624 Devices 2N7370 Qualified ...
Datasheet	2N7370 PDF File

Overview

TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/624 Devices 2N7370 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 0.
667 W/0C above TC > +250C Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Value 100 100 5.
0 0.
2 12 100 -65 to +175 Units Vdc Vdc Vdc Adc Adc W 0C Symbol RθJC Max.
1.
5 Unit 0C/W ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCEO(sus) VCE = 50 Vdc Collector-Emitter Cutoff Current ICEO VCE = 100 Vdc, VBE = 1.
5 Vdc Emitter-Base Cutoff Current ICEX VEB = 5.
0 Vdc IEBO TO-254* *See Appendix A ...

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