DatasheetsPDF.com

2N7368

Microsemi Corporation
Part Number 2N7368
Manufacturer Microsemi Corporation
Description NPN HIGH POWER SILICON TRANSISTOR
Published Aug 1, 2006
Detailed Description www.DataSheet4U.com TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/622 Devices 2N7368 Qua...
Datasheet PDF File 2N7368 PDF File

2N7368
2N7368

Overview
www.
DataSheet4U.
com TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/622 Devices 2N7368 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W Collector-Emitter Voltage 80 VCEO Collector-Base Voltage 80 VCBO Emitter-Base Voltage 7.
0 VEBO Base Current IB 4.
0 Collector Current 10 IC DataSheet4U.
com Total Power Dissipation @ TC = 250C (1) 115 PT Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg DataShee THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC 0 Max.
1.
5 TO-254* 1) Derate linearly 0.
657 W/ C for TC > 25 C *See appendix A for package outline 0 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min.
Max.
Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 0.
2 Adc Collector-Emitter Cutoff Current VCE = 70 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.
5 Vdc Emitter-Base...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)