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2N7371

Microsemi Corporation
Part Number 2N7371
Manufacturer Microsemi Corporation
Description PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
Published Jun 4, 2007
Detailed Description TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/623 Devices 2N7371 Qualified Lev...
Datasheet PDF File 2N7371 PDF File

2N7371
2N7371

Overview
TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/623 Devices 2N7371 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC Value 100 100 5.
0 0.
2 12 100 -65 to +175 Max.
1.
5 Units Vdc Vdc Vdc Adc Adc W 0 www.
DataSheet4U.
com C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 0 Unit C/W TO-254AA* 1) Derate linearly 0.
667 W/0C above TC > +250C *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min.
Max.
Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.
5 Vdc Emitter-Base Cutoff Current VEB = 5.
0 Vdc VCEO(sus) ICEO ICEX IEBO 100 1.
0 0.
5 2.
0 Vdc mAdc mAdc mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N7371 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min.
Max.
Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 6.
0 Adc, VCE = 3.
0 Vdc IC = 12 Adc, VCE = 3.
0 Vdc Collector-Emitter Saturation Voltage IC = 12 Adc, IB = 120 mAdc Base-Emitter Saturation Voltage IC = 12 Adc, IB = 120 mAdc hFE 1,000 150 18,000 VCE(sat) VBE(sat) 3.
0 4.
0 Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 5.
0 Adc, VCE = 3.
0 Vdc, f = 1.
0 MHz hfe 10 250 SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 12 Adc; IB1 = 120 mAdc Turn-Off Time VCC = 30 Vdc; IC = 12 Adc; IB1 = IB2 = 120 mAdc t on 2.
0 10 µs µs t off SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t ≥ 1.
0 s Test 1 VCE = 8.
3 Vdc, IC = ...


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