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MJD32C

Part Number	MJD32C
Manufacturer	Dc Components
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Published	Sep 3, 2017
Detailed Description	DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJD32C TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR ...
Datasheet	MJD32C PDF File

Overview

DC COMPONENTS CO.
, LTD.
R DISCRETE SEMICONDUCTORS MJD32C TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications.
Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -100 -100 -5 -3 15 +150 -55 to +150 Unit V V V A W oC oC TO-252(DPAK) .
268(6.
80) .
252(6.
40) .
217(5.
50) .
205(5.
20) 2 .
063(1.
60) .
055(1.
40) .
077(1.
95) .
065(1.
65) .
022(0.
55) .
018(0.
45) 1 .
...

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