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BUK9608-55

Part Number	BUK9608-55
Manufacturer	NXP
Description	TrenchMOS transistor Logic level FET
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhan...
Datasheet	BUK9608-55 PDF File

Overview

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in automotive and general purpose switching applications.
BUK9608-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX.
55 75 187 175 8 UNIT V A W ˚C mΩ PINNING - SOT4...

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