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BUK9608-55B

NXP Semiconductors
Part Number BUK9608-55B
Manufacturer NXP Semiconductors
Description N-Channel MOSFET
Published Aug 20, 2014
Detailed Description BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 — 4 May 2010 Product data sheet 1. Product profile 1.1 General ...
Datasheet PDF File BUK9608-55B PDF File

BUK9608-55B
BUK9608-55B

Overview
BUK9608-55B N-channel TrenchMOS logic level FET Rev.
04 — 4 May 2010 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.
2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V and 24 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 55 75 203 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 6.
2 7.
1 7 8.
4 mΩ mΩ NXP Semiconductors BUK9608-55B N-channel TrenchMOS logic level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 352 mJ Table 1.
Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge VGS = 5 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD 16 nC [1] Continuous current is limited by package.
2.
Pinning information Table 2.
Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2.
3.
Ordering information Table 3.
Ordering information P...


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