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BUK9608-55A

nexperia
Part Number BUK9608-55A
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 January 2011 Product data sheet 1. Product profile 1.1 G...
Datasheet PDF File BUK9608-55A PDF File

BUK9608-55A
BUK9608-55A

Overview
BUK9608-55A N-channel TrenchMOS logic level FET Rev.
04 — 31 January 2011 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.
2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V and 24 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics ...


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