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BUK9608-55A

Philips
Part Number BUK9608-55A
Manufacturer Philips
Description transistor Logic level FET
Published Jun 7, 2014
Detailed Description Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhan...
Datasheet PDF File BUK9608-55A PDF File

BUK9608-55A
BUK9608-55A

Overview
Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .
Using ’trench’ technology which features very low on-state resistance.
It is intended for use in automotive and general purpose switching applications.
BUK9508-55A BUK9608-55A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V V GS = 10 V MAX.
55 75 200 175 8 7.
3 UNIT V A W ˚C mΩ mΩ PINNING TO220AB & SOT404 PIN 1 2 3 DESCRIPTION gate drain source ww re .
nu at an e ce.
8 com Tr ia PIN CONFIGURATION mb tab SYMBOL 2 1 3 12 3 tab/mb drain SOT404 TO220AB LIMITING VALUES SYMBOL VDS VDGR ±VGS ±VGSM Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS RGS = 20 kΩ tp≤50µS Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature F w C l d g s MIN.
-5 - MAX.
55 5 10 15 75 65 400 200 175 UNIT V V V V A A A W ˚C PD ID ID IDM Ptot Tstg, Tj Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C - - 55 THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient(TO220AB) Thermal resistance junction to ambient(SOT404) CONDITIONS in free air Minimum footprint, FR4 board TYP.
60 50 MAX.
0.
75 UNIT K/W K/W K/W September 2000 1 Rev 1.
100 http://www.
Datasheet4U.
com Philips Semiconductors Product specification TrenchMOS transistor Logic level FET STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage CONDITIONS...


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