DatasheetsPDF.com

BUL39

STMicroelectronics
Part Number BUL39
Manufacturer STMicroelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description ® BUL39D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM L...
Datasheet PDF File BUL39 PDF File

BUL39
BUL39

Overview
® BUL39D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES s 3 1 2 DESCRIPTION The BUL39D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining wide RBSOA.
The BUL series is designed for use in electronics transformers for halogen lamps.
TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 C Storage Temperature Max.
Operating Junction Temperature o Value 850 450 9 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o o C C June 1998 1/6 BUL39D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.
78 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO VCEO(sus) Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage (I B = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Maximum Collector Emitter Voltage Without Snubber INDUCTIVE LOAD Storage Time Fall Time Diode Forward Voltage Test Conditions V CE = rated V CES V CE = rated V CES V EB = 9 V I C = 100 mA L = 25 mH 450 T j = 125 o C Min.
Typ.
Max.
100 500 100 Unit µA µA µA V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ V CEW IC = 1 A I C = 2.
5 A IC = 1 A I C = 2.
5 A IC = 5 A I C = 10 mA IC = 6 A V BB = -2.
5 V t p = 10 µ s I C = 2.
5 A V BE(off) = -5 V V CL = 300 V IC = 2 A I B = 0.
2 A I B = 0.
5 A I B = 0.
2 A I B = 0.
5 A V CE = 10 V V CE...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)