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BUZ311

Siemens Semiconductor Group
Part Number BUZ311
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 311 SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 311 VDS 1000 V ...
Datasheet PDF File BUZ311 PDF File

BUZ311
BUZ311

Overview
BUZ 311 SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 311 VDS 1000 V ID 2.
5 A RDS(on) 5Ω Package TO-218 AA Ordering Code C67078-A3102-A2 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 2.
5 TC = 25 °C Pulsed drain current IDpuls 10 TC = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 78 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 .
+ 150 °C -5...


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