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BUZ347

Siemens Semiconductor Group
Part Number BUZ347
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 347 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 ...
Datasheet PDF File BUZ347 PDF File

BUZ347
BUZ347

Overview
BUZ 347 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 347 VDS 50 V ID 45 A RDS(on) 0.
03 Ω Package TO-218 AA Ordering Code C67078-S3115-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 45 Unit A ID IDpuls 180 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 45 2.
5 mJ ID = 45 A, VDD = 25 V, RGS = 25 Ω L, Tj = 25 °C Gate source voltage Power dissipation 41 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 .
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+ 150 -55 .
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+ 150 ≤1 ≤ 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 347 Not for new design Electrical Characteristics, at Tj = 25°C, unless other...


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