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BUZ350

Part Number	BUZ350
Manufacturer	Siemens Semiconductor Group
Description	Power Transistor
Published	Mar 23, 2005
Detailed Description	BUZ 350 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet	BUZ350 PDF File

Overview

BUZ 350 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 350 VDS 200 V ID 22 A RDS(on) 0.
12 Ω Package TO-218 AA Ordering Code C67078-S3117-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 22 Unit A ID IDpuls 88 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 22 12 mJ ID = 22 A, VDD = 50 V, RGS = 25 Ω L = 1.
39 mH, Tj = 25 °C Gate source voltage Power dissipation 450 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal res...

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