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BUZ357

Siemens Semiconductor Group
Part Number BUZ357
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 357 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet PDF File BUZ357 PDF File

BUZ357
BUZ357

Overview
BUZ 357 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 357 VDS 1000 V ID 5.
1 A RDS(on) 2Ω Package TO-218 AA Ordering Code C67078-S3110-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 5.
1 Unit A ID IDpuls 20 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 5.
1 18 mJ ID = 5.
1 A, VDD = 50 V, RGS = 25 Ω L = 62 mH, Tj = 25 °C Gate source voltage Power dissipation 850 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resi...


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