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BSP170P

Siemens Semiconductor Group
Part Number BSP170P
Manufacturer Siemens Semiconductor Group
Description SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated)
Published Mar 23, 2005
Detailed Description BSP 170 P Preliminary data SIPMOS® Power Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated Pin...
Datasheet PDF File BSP170P PDF File

BSP170P
BSP170P

Overview
BSP 170 P Preliminary data SIPMOS® Power Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated Pin 1 G Type BSP 170 P VDS 60 V ID RDS(on) Package @ VGS VGS = -10 V SOT-223 Maximum Ratings , at Tj = 25°C, unless otherwise specified Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Avalanche energy, single pulse ID = -1.
9 A, VDD = -25 V, RGS = 25 Ω Avalanche current,periodic limited by Tjmax Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt IS = -1.
9 A, VDD ≤V(BR)DSS, di/dt = 200 A/µs, Tjmax = 150 °C Gate source voltage Power dissipation TA = 25 °C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj Tstg ±20 1.
8 -55 .
.
.
+150 -55.
.
.
+150 55/150/56 V W °C EAS IAR EAR dv/dt 70 -1.
9 0.
18 6 mJ A mJ kV/µs IDpulse Symbol ID -1.
9 -1.
5 -7.
6 Value Unit A Pin 2/4 D Pin 3 S Ordering Code Q67041-S4018 -1.
9 A 0.
3 Ω Semiconductor Group 1 07 / 1998 BSP 170 P Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction -soldering point (Pin 4 ) SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area1) RthJS RthJA tbd 70 Symbol min.
Values typ.
max.
tbd K/W Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.
25 mA Gate threshold voltage, VGS = VDS ID = -460 µA Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -10 V, ID = -1.
9 A IGSS RDS(on) VGS(th) IDSS -0.
1 -10 0.
175 -1 -100 -100 0.
3 nA Ω -2.
1 -3 -4 µA V(BR)DSS 60 V 1 Device on 50mm*50mm*1.
5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air.
Semiconductor Group 2 07 / 1998 BSP 170 P Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Dynamic...


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