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BSP171

Siemens Semiconductor Group
Part Number BSP171
Manufacturer Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level Avalanche rated)
Published Mar 23, 2005
Detailed Description BSP 171 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = -0...
Datasheet PDF File BSP171 PDF File

BSP171
BSP171

Overview
BSP 171 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = -0.
8.
.
.
-2.
0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 171 Type BSP 171 VDS -60 V ID -1.
7 A RDS(on) 0.
35 Ω Package SOT-223 Marking BSP 171 Ordering Code Q67000-S224 Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symbol Values -1.
7 Unit A ID IDpuls -6.
8 TA = 24 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse EAS 8 mJ ID = -1.
7 A, VDD = -25 V, RGS = 25 Ω L = 3.
23 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 1.
8 V W TA = 25 °C Semiconductor Group 1 18/02/1997 BSP 171 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS -60 -1.
4 -0.
1 -10 -10 0.
22 -2 V VGS = 0 V, ID = -0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.
8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -100 µA VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS -100 nA Ω 0.
35 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = -10 V, ID = -1.
7 A Semiconductor Group 2 18/02/1997 BSP 171 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 1 1.
55 720 290 120 - S pF 960 435 180 ns 16 25 VDS≥ 2 * ID * RDS(on)max, ID = -1.
7 A Input capaci...


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