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BSP171P

Infineon Technologies AG
Part Number BSP171P
Manufacturer Infineon Technologies AG
Description SIPMOS Small-Signal-Transistor
Published Mar 23, 2005
Detailed Description BSP171P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /d...
Datasheet PDF File BSP171P PDF File

BSP171P
BSP171P

Overview
BSP171P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /dt rated Product Summary V DS R DS(on),max ID -60 0.
3 -1.
9 V Ω A SOT-223 Type BSP 171 P Package SOT-223 Ordering Code Q67041-S4019 Marking 171P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 °C1) T A=70 °C1) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=-1.
9 A, R GS=25 Ω I D=-1.
9 A, V DS=-48 V, di /dt =-200 A/µs, T j,max=150 °C -1.
9 -1.
5 -7.
6 70 mJ A Unit Reverse diode dv /dt dv /dt -6 kV/µs Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg T A=25 °C1) ±20 1.
8 -55 .
.
.
150 55/150/56 V W °C Rev.
2.
0 page 1 2004-01-20 BSP171P Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, steady state 6 cm2 cooling area1), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-460 µA V DS=-60 V, V GS=0 V, T j=25 °C V DS=-60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-4.
5 V, I D=-1.
5 A V GS=-10 V, I D=-1.
9 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.
5 A -60 -1 -1.
5 -2 V 25 K/W Values typ.
max.
Unit R thJA - - 110 - - 70 Zero gate voltage drain current I DSS - -0.
1 -1 µA - -10 -10 0.
3 -100 -100 0.
45 nA Ω - 0.
21 0.
3 1.
4 2.
7 - S 1) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Rev.
2.
0 page 2 2004-01-20 BSP171P Parameter Symbol Conditions min.
Dynami...


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