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BSP171P

Siemens Semiconductor Group
Part Number BSP171P
Manufacturer Siemens Semiconductor Group
Description SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated)
Published Mar 23, 2005
Detailed Description BSP 171 P Preliminary data SIPMOS® Power Transistor • P-Channel • Enhancement mode • Avalanche rated • Logic Level • d...
Datasheet PDF File BSP171P PDF File

BSP171P
BSP171P

Overview
BSP 171 P Preliminary data SIPMOS® Power Transistor • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Pin 1 G Type BSP 171 P VDS -60 V ID RDS(on) Pin2/4 D Pin 3 S -1.
8 A 0.
3 Ω Package Ordering Code @ VGS VGS = -10 V P-SOT223-4-1 Q67041-S4019 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current T A = 25 °C T A = 100 °C Pulsed drain current T A = 25 °C Avalanche energy, single pulse ID = -1.
8 A, VDD = -25 V, RGS = 25 Ω Avalanche current,periodic limited by Tjmax Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt IS = -1.
8 A, V DD ≤V(BR)DSS, di/dt = 100 A/µs, T jmax = 150 °C Gate source voltage Power dissipation, TA = 25 °C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj Tstg IAR EAR dv/dt EAS ID puls ID Value -1.
8 -1.
15 -7.
2 70 -1.
8 0.
18 6 Unit A mJ A mJ KV/µs ±14 1.
8 -55 .
.
.
+150 -55 .
.
.
+150 55/150/56 V W °C Semiconductor Group 1 04 / 1998 BSP 171 P Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction -soldering point (Pin 4) Thermal resistance, junction - ambient SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling areaF) RthJS RthJA RthJA tbd tbd 70 Symbol min.
Values typ.
tbd max.
tbd K/W Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.
25 mA Gate threshold voltage, VGS = VDS ID = -460 µA, Tj = 25 °C Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = -40 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -4.
5 V, ID = -1.
5 A VGS = -10 V, ID = -1.
8 A RDS(on) 0.
3 0.
21 0.
45 0.
3 Ω IGSS VGS(th) IDSS -0.
1 -10 -0.
1 -1 -100 -100 nA -1 -1.
5 -2 µA V(BR)DSS -60 V Semiconductor Group 2 04 / 1998 BSP 171 P Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unl...


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