DatasheetsPDF.com

BSP300

Siemens Semiconductor Group
Part Number BSP300
Manufacturer Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
Published Mar 23, 2005
Detailed Description BSP 300 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.0... 4.0 V Pin 1...
Datasheet PDF File BSP300 PDF File

BSP300
BSP300

Overview
BSP 300 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.
0.
.
.
4.
0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 300 Type BSP 300 BSP 300 VDS 800 V ID 0.
19 A RDS(on) 20 Ω Package SOT-223 Marking BSP 300 Ordering Code Q67050 -T0009 Q67050-T0017 Tape and Reel Information E6433 E6327 Maximum Ratings Parameter Continuous drain current Symbol Values 0.
19 Unit A ID IDpuls 0.
76 TA = 25 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse EAS 36 mJ ID = 0.
8 A, VDD = 50 V, RGS = 25 Ω L = 105 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 1.
8 V W TA = 25 °C Semiconductor Group 1 02/12/1996 BSP 300 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 70 ≤ 14 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 800 3 0.
1 10 10 15 4 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 20 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.
19 A Semiconductor Group 2 02/12/1996 BSP 300 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 0.
06 0.
27 170 20 10 - S pF 230 30 15 ns 7 11 VDS≥ 2 * ID * RDS(on)max, ID = 0.
19 A Input capacitance Ciss Cos...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)